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August 1950 Fujimi Abrasives was founded and started production of synthetic precision abrasive commenced.
March 1953 Fujimi Abrasives Manufacturing Co., Ltd., established.
1957 Supplied lapping abrasives for germanium semiconductor substrates for Tokyo Tsushin Kogyo, the predecessor of Sony Corporation.
July 1959 Moved headquarters to current location. Began manufacturing high-purity aluminum for vacuum tube and transistor insulators.
January 1961 Began manufacturing FS polish for germanium wafers.
July 1967 Announced the development of GLANZOX polish for silicon wafers.
May 1970 Commenced operations at the Inazawa Plant.
January 1977 Began manufacturing POLIPLA plastic lens polishing compounds.
June 1984 Incorporated Fujimi Corporation in Illinois, U.S.A.
January 1985 Commenced operations at the Kakamigahara Plant.
May 1988 Incorporated Fujimi America Inc. in Oregon, U.S.A.
September 1988 Developed FGL-3900 ultrahigh-purity polishing compound for silicon wafers.
November 1990 Developed the DISKLITE series, the first polishing compounds developed especially for memory disks.
October 1991 Fujimi Abrasives merged three domestic affiliates and was renamed Fujimi Incorporated.
October 1993 Developed the DIATEC-GTX series of disk texturing compounds.
June-September 1994 Obtained ISO 9002 certification for all production facilities in Japan and the U.S.A.
April 1995 Listed Fujimi's shares on the over-the-counter market. (now listed on JASDAQ)
Fujimi-Micro Technology Sdn. Bhd's. in Malaysia. Established the joint venture.
Developed the PLANERLITE series of CMP slurries.
October 1996 Commenced operations at Fujimi America's Tualatin Plant in Oregon, U.S.A.
December 1996 Commenced operations at the Kakamihigashimachi Plant.
March 1998 Completed construction of new headquarters building
January 1999 Commenced operations at new logistics center.
March 1999 Obtained ISO 9001 for all production facilities in Japan.
November 1999 Made Fujimi Corporation a wholly owned subsidiary.
March 2000 Obtained ISO 14001 certification for all production facilities in Japan.
May 2000 Commenced operations at the No.2 Kakamihigashimachi Plant
(Surface Technology Plant).
September 2000 Started R&D activities at new R&D Center.
October 2000 Fujimi-Micro Technology Sdn. Bhd's. Kulim Plant starts operations in Malaysia.
December 2000 Develops the PLANERLITE-7000,new slurry series for Cu CMP.
January 2001 Introduces the SURPREX-W2010X,new WC cermet thermal spraying composites with enhanced impact resistance.
March 2002 Fujimi America Inc. won a Preferred Quality Supplier award from Intel.
October 2002 Succeeded with world's first ultrafine-grain thermal spray system employing a high velocity oxy fuel (HVOF) process.
March 2003 ISO 14001 certification obtained for Fujimi-Micro Technology Sdn. Bhd. Parent company and Fujimi America Inc. received Preferred Quality Supplier Award from Intel Corporation.
July 2003 Fujimi America Inc. and Fujimi Corporation merge under the name Fujimi Corporation.
January 2004 Fujimi Europe Limited (England) and Fujimi Europe Gmbh (Germany) start operations
March 2004
Fujimi Corporation receives Intel's Prestigious Supplier Continuous Quality Improvemennt award.
Octorber 2005 Established an office in Taiwan
February 2007 Listed Fujimi's shares on the Tokyo Stock Exchange First Section and Nagoya Stock Exchange First Section.
March 2007 Withdraw from the list of JASDAQ securities exchange.
April 2007 Head Quarter Plant changes its name to Biwajima Plant.
May 2007 Established an office in Shanghai.
May 2008 Commenced operations at Kakamihigashimachi Plant No.2.
July 2008 Fujimi Corporation received World Class Supplier Pathfinder Award 2007 from AMD.
Octorber 2008 Established an office in Korea.
March 2010 Succeeded with world's first Novel tungsten carbide powders applicable to low temperature spray process of 500 deg C.
August 2011 Established Fujimi Taiwan Limited in Taiwan.
   

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